• Home
• dsg layering
• TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

4.5 (308) · $ 23.50 · In stock

Effect of 3 nm gate length scaling in junctionless double

Anil VOHRA, Professor (Full), M.Sc., Ph.D

Modelled and experimental Hall voltage response in vertical Hall

Subband profile along the device length (left), and current

I-V curves for Non-graded base SiGe HBT

Modelled and experimental Hall voltage response in vertical Hall

IG vs VGS curves with various metal gates for Si with and without

Schematic of the real-space representation of an electron device

Photo-generation Rate generated in the model.

Effect of 3 nm gate length scaling in junctionless double